Apparatus for making carbon nanotube structure with catalyst island

ABSTRACT

Carbon nanotube growth is achieved in a high-yield process. According to an example embodiment of the present invention, a furnace chamber is adapted to grow a carbon nanotube device via catalyst islands. The carbon nanotube device includes a catalyst island, such as Fe 2 O 3 , and a carbon nanotube extending therefrom. In one more specific implementation, the catalyst island is disposed on a top surface of a substrate. The carbon nanotube device is useful in a variety of implementations and applications, such as in an atomic force microscope (AFM), in resonators (e.g., where a free end of the carbon nanotube is adapted to vibrate) and in electronic circuits (e.g., where the carbon nanotube is electrically coupled between two nodes, such as between the catalyst island and a circuit node). In addition, growing carbon nanotubes with such a catalyst island is particularly useful in the high-yield growth of a large number of nanotubes.

RELATED PATENT DOCUMENTS

[0001] This is a divisional of U.S. patent application Ser. No.10/042,426 (STFD.021C1) filed on Jan. 7, 2002 and entitled “CarbonNanotube Structure Having A Catalyst Island,” which is a continuation ofU.S. patent application Ser. No. 09/133,948 (STFD.021PA/S98-049) filedon Aug. 14, 1998, now U.S. Pat. No. 6,346,189, and entitled “CarbonNanotube Structures made Using Catalyst Islands,” to which priority isclaimed under 35 U.S.C. §120.

FIELD OF THE INVENTION

[0002] The present invention relates generally to carbon nanotubes andmore particularly to the growth of carbon nanotubes using catalystislands.

BACKGROUND

[0003] Carbon nanotubes including single-walled carbon nanotubes (SWNT)are ideal quantum systems for exploring basic science in one-dimension.These novel molecular-scale wires, derived by bottom-up chemicalsynthesis approaches are also promising as core components orinterconnecting wires for electronics and other applications. Richquantum phenomena have been revealed with SWNTs and functionalelectronic devices such as transistors, chemical sensors and memorydevices have been built. In these and other devices, it is sometimesdesirable to use individual, high quality SWNTs.

[0004] Obtaining individual, high quality, single-walled nanotubes hasproven to be a difficult task, particularly when manufacturing thenanotubes in bulk quantities. Previous methods for the production ofnanotubes yield bulk materials with tangled nanotubes. Nanotubes in suchbulk materials are typically in a bundled form. These tangled nanotubesare difficult to purify, isolate, manipulate, and use as discreteelements for making functional devices. For example, in makingfunctional microscopic devices, bulk tangled nanotubes are difficult toimplement due to the difficulty of isolating one individual tube fromthe tangled nanotubes, manipulating the tube, and constructing afunctional device using the isolated tube. Also, carbon nanotubesmanufactured in this manner tend to exhibit molecular-level structuraldefects that result in weaker tubes with poor electricalcharacteristics. These and other difficulties have presented challengesto the manufacture of carbon nanotubes for implementation in a varietyof applications, such as functional microscopic devices.

SUMMARY OF THE INVENTION

[0005] The present invention is directed to carbon nanotubes and thefabrication thereof. The present invention is exemplified in a number ofimplementations and applications, some of which are summarized below.

[0006] In one example embodiment of the present invention, anindividual, distinct nanotube device includes a catalyst island and ananotube extending therefrom. In one implementation, the nanotube is asingle-walled carbon nanotube. The nanotube device is adapted to beimplemented in one or more semiconductor microstructures. In oneimplementation, a chamber arrangement is adapted as a system formanufacturing a carbon nanotube device. The arrangement includes firstchamber means for forming at least one island of catalyst material, andsecond chamber means for contacting the catalyst island with acarbon-containing gas and forming a carbon nanotube extending from thecatalyst island.

[0007] In another implementation, a chamber apparatus is configured andarranged to heat a substrate while introducing a carbon feedstock gas toan overlying catalyst material and growing an aligned carbon nanotubeextending from the catalyst material and across the trench

[0008] In another implementation, the catalyst island is located on atop surface of a semiconductor substrate, which may, for example,include silicon, alumina, quartz, silicon oxide or silicon nitride. Thecatalyst may include Fe₂O₃ or other catalyst materials includingmolybdenum, cobalt, nickel, or zinc and oxides thereof. In oneimplementation, the catalyst island is between about 1 and 5 microns insize.

[0009] In another example embodiment of the present invention,individual, distinct single-walled nanotubes are grown from catalystislands. The nanotubes are grown using a hydrocarbon gas that isintroduced to the catalyst islands, where the hydrocarbon gas isreacted. The nanotube growth is confined to selected locations, and theresulting nanotubes can be easily addressed and integrated intostructures to obtain functional microscopic devices.

[0010] In another example embodiment of the present invention, ananotube-tipped atomic force microscope (AFM) device includes a nanotubeextending from a catalyst island on a cantilever tip. The cantilever isadapted for use as a scanning tip in conventional AFM applications.

[0011] In another example embodiment of the present invention, a carbonnanotube device includes a substrate with two electrically conductivecatalyst islands coupled to one another by a nanotube extending betweenthe islands. The nanotube and the catalyst island are adapted forelectrically coupling to other circuitry, such as via a conductiveinterconnect. In one implementation, the nanotube is freestanding abovethe substrate and adapted for use as a high frequency, high-Q resonator.In another implementation, one of the catalyst islands is replaced by aconductive metal pad.

[0012] The above summary of the present invention is not intended todescribe each illustrated embodiment or every implementation of thepresent invention. The figures and detailed description that follow moreparticularly exemplify these embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The invention may be more completely understood in considerationof the detailed description of various embodiments of the invention thatfollows in connection with the accompanying drawings, in which:

[0014]FIG. 1 shows a first step in making nanotubes, according to anexample embodiment of the present invention;

[0015]FIG. 2 shows a second step in making nanotubes, according toanother example embodiment of the present invention;

[0016]FIG. 3 shows a third step in making nanotubes, according toanother example embodiment of the present invention;

[0017]FIG. 4 shows a top view of a substrate with three catalystislands, according to another example embodiment of the presentinvention;

[0018]FIG. 5 shows a top view of a single catalyst island that has beenused to grow nanotubes, according to another example embodiment of thepresent invention;

[0019]FIG. 6 shows an apparatus that has a nanotube connected between acatalyst island and a metal pad, according to another example embodimentof the present invention;

[0020]FIG. 7 shows metal covers disposed on top of catalyst islands andportions of nanotubes, according to another example embodiment of thepresent invention;

[0021]FIGS. 8A-8C illustrate the metal covers, such as those of FIG. 7,being made according to another example embodiment of the presentinvention;

[0022]FIG. 9 shows a side view of a resonator made from a freestandingnanotube supported by the ends of the nanotube, according to anotherexample embodiment of the present invention;

[0023]FIG. 10 shows a top view illustrating a carbon nanotube device,such as that shown in FIG. 9, being made according to another exampleembodiment of the present invention;

[0024]FIGS. 11A and 1B illustrate a method of making a carbon nanotubedevice, such as that shown in FIG. 9, according to another exampleembodiment of the present invention;

[0025]FIG. 12 shows an atomic force microscope tip undergoingmanufacture, according to another example embodiment of the presentinvention; and

[0026]FIGS. 13A-13D illustrate a method of producing a carbon nanotubeon a tip of an atomic force microscope cantilever, according to anotherexample embodiment of the present invention.

[0027] While the invention is amenable to various modifications andalternative forms, specifics thereof have been shown by way of examplein the drawings and will be described in detail. It should beunderstood, however, that the intention is not to limit the invention tothe particular embodiments described. On the contrary, the intention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention.

DETAILED DESCRIPTION

[0028] The present invention is believed to be applicable to a varietyof different devices and implementations, and the invention has beenfound to be particularly suited for manufacturing carbon nanotubes.While the present invention is not necessarily limited to suchapplications, various aspects of the invention may be appreciatedthrough a discussion of various examples using this context.

[0029] According to an example embodiment of the present invention, acarbon nanotube device includes a single-walled carbon nanotubeextending from a catalyst particle. The particle may, for example, belocated on a surface, such as a top surface of a semiconductor substrateor on a cantilever tip of an AFM. In one implementation, the carbonnanotube device includes a plurality of catalyst islands on a topsurface of a substrate, each island having a carbon nanotube extendingtherefrom.

[0030]FIGS. 1-5 show individually distinct carbon nanotubes being grown,according to another example embodiment of the present invention. InFIG. 1, a layer of resist 20 is disposed and patterned on a top surfaceof a substrate 22 using, for example, electron beam (e-beam)lithography. The substrate 22 is made of material that may, for example,include one or more of silicon, alumina, quartz, silicon oxide orsilicon nitride, and in one implementation, includes a metal film on thetop surface. The patterning results in at least one hole 24 in theresist 20 that exposes the underlying substrate 22. In oneimplementation, holes formed in the resist are about 3-5 microns in sizeand are spaced apart by a distance 26 of about 10 microns.

[0031] In FIG. 2, a catalyst layer 28 is deposited on the surfaces ofthe resist 20 and substrate 22. The catalyst layer may include one ormore of a variety of catalysts. In one implementation, the catalystincludes a solution of Fe(NO₃)₃ in methanol, mixed with aluminananoparticles having a diameter of about 15-30 nanometers. In otherimplementations, the catalyst includes one or more of: elemental metals;oxides of elemental metals (e.g., iron, molybdenum and zinc oxides); amixture of iron, molybdenum and ruthenium oxides; and iron salts such asFe(SO4).

[0032] The nanoparticles can be made of many ceramic materials,depending upon the application and available materials. For instance,one or more of refractory oxide ceramic materials such as alumina andsilica can be used. In one particular application using Fe(NO₃)₃, thecatalyst preparation includes mixing 4.0 grams of alumina nanoparticleswith 1.0 gram of Fe(NO₃)*9H₂O in 30 mL methanol for 24 hours. Themixture is applied to the substrate and the methanol is evaporated,leaving a layer 28 of alumina nanoparticles coated with Fe(NO₃)₃adhering to the resist and in the holes 24. In FIG. 3, a lift-offprocess is performed, leaving isolated islands 29 of catalyst (e.g.,Fe(NO₃)₃-coated nanoparticles) adhering in regions where holes 24existed. FIG. 4 shows a top view of the catalyst islands 29.

[0033] The substrate 22 is heated and nanoparticles of the catalyst aredecomposed (e.g., the Fe(NO₃)₃ is decomposed to Fe₂O₃). The substratemay be heated, for example, by placing the substrate in a furnace withan Argon atmosphere and heating to between about 100-400 degreesCelsius. The decomposed catalyst nanoparticles are an active catalystthat catalyzes the formation of carbon nanotubes when exposed to methanegas at elevated temperature.

[0034] In a more particular example embodiment of the present invention,the substrate with catalyst islands 29 is heated in a furnace at about850-1000 degrees Celsius, and 99.99% pure methane is flowed over thecatalyst islands 29 at a velocity of about 2-20 centimeters per secondto grow single-walled nanotubes. In one implementation, a 1-inchdiameter tube is used, wherein methane is introduced at a flow rate ofabout 600-6000 cm³/min to achieve a velocity of about 2-20 centimetersper second. The amount of time that the methane is introduced to thecatalyst island is sufficient to react the methane and grow a nanotube,and in one implementation, is about 10 minutes.

[0035] The nanotubes are formed substantially straight and withoutstructural flaws (e.g., all the carbon rings in the nanotubes have 6carbon atoms instead of 5 or 7 carbon atoms). Most of the nanotubes aresingle-walled, with diameters in the range of about 1-5 nanometers. At afurnace temperature of about 1000 degrees Celsius, it has beendiscovered that about 90% of the nanotubes are single-walled when grown.At a furnace temperature of about 900 degrees Celsius, about 99% of thetubes are single-walled with most of the nanotubes having diameters inthe range of about 1-2 nanometers. The nanotubes have large length todiameter aspect ratios (e.g., approaching about 10,000) and are verystraight, due to the absence of structural flaws.

[0036] In another example embodiment of the present invention,nanoparticles are not used in forming the catalyst. Small quantities ofIron salts are deposited on the substrate (e.g., by dissolving the ironsalts in a solvent and evaporating the solvent), and the substrate isheated to decompose the iron salts without necessarily mixing the ironsalts with nanoparticles.

[0037] In another example embodiment of the present invention, a furnacechamber is configured and arranged for manufacturing carbon nanotubes.The furnace is adapted to flow a carbon feedstock gas, such as methane,and to react the carbon feedstock gas using a catalyst for growingcarbon nanotubes. In one implementation, the furnace chamber is adaptedto heat a substrate and catalyst to between about 850 and 1000 degreesCelsius, and to flow methane gas at a velocity of about 2-20 centimetersper second to a catalyst in the furnace. The methane may, for example,be reacted at catalyst islands on a substrate to form a carbon nanotube.

[0038]FIG. 5 shows a top view of the catalyst island 29 having aplurality of nanotubes 30 grown therefrom in random directions. Thecarbon nanotubes are disposed in contact with the substrate surface andare firmly attached to the island 29. The nanotubes are grown in abase-growth mode, where new carbon is added to the nanotubes 30 at thepoint where they are attached to the island 29, such that an end of thenanotubes that is opposite the end attached to the island is free. Inone implementation, the nanotubes are adapted to be used as resonatorswherein the free end vibrates.

[0039] In another example embodiment of the present invention, thecarbon nanotubes 30 are not tangled together, are individually separableand are spaced apart by a substantial distance. In one implementation,between about 10-50 nanotubes are grown from a catalyst island. Theindividually separable nanotubes are particularly useful for themanufacture of electronic and micromechanical devices, whereinindividual nanotubes are incorporated into the devices by appropriatelylocating islands 29. Electrical and mechanical connections are easilymade to individual nanotubes if they are spatially separated anddistinct.

[0040] In another example embodiment of the present invention, largernumbers of nanotubes are grown (e.g., using a more effective catalyst).The nanotubes grown in large numbers form bundles that are useful formany electrical and mechanical devices such as field effect transistors,single electron transistors, and resonators that have only one fixedend.

[0041]FIG. 6 is a top view of an electronic device made by locating theisland 29 close to a patterned metal pad 32, according to anotherexample embodiment of the present invention. A single nanotube 30 a isgrown extending from the island 29 to the metal pad 32 and electricallyconnecting the island 29 and pad 32. The island 29 and pad 32 are spacedapart by a distance in the range of between about 100 nanometers and 5microns, with the likelihood that the nanotube grows to the pad 32increasing as the distance between the pad 32 and island 29 is reduced.The island 29 and pad 32 are both electrically conductive, and apatterned conductive line 33 on the substrate surface electricallyconnects to the nanotube 30 a on a macroscopic scale. The nanotube 30 awith such a macroscopic electrical connection on each end can be used inmany devices including field-effect transistors, single electrontransistors and low current value fuses. In one implementation, theconductive line 33 is applied to the substrate 20 before the island 29is deposited, such that the island rests on top of the conductive line33. In another implementation, the conductive line 33 is disposed on topof the islands.

[0042] In another implementation (not shown), when two or more nanotubessimultaneously electrically connect the island 29 and metal pad 32, allbut one of the nanotubes is broken with an AFM tip. For instance, an AFMtip can be dragged across the substrate surface so that it bendsunwanted nanotubes until they break.

[0043] In another example embodiment of the present invention, a secondcatalyst island is substituted for the metal pad 32. In thisimplementation, the nanotube 30 a provides electrical contact betweentwo catalyst islands instead of between the island 29 and the metal pad32. Metal line 33 similarly provides electrical connection to thesubstituted catalyst island.

[0044]FIG. 7 shows a side view of a substrate 22 in which a metal cover34 is deposited on top of each catalyst island 29, according to anotherexample embodiment of the present invention. The metal covers 34 includeone or more of a variety of metals, such as platinum or titanium-goldalloy. Each metal cover 34 covers a portion of each island 29 and coversan end portion 37 of the nanotube 30 a and holds the nanotube 30 arigidly in place.

[0045] In another example embodiment of the present invention, thesubstrate is heated to about 300 degrees Celsius in air after the metalcovers are deposited, and Ohmic electrical connection to the ends of thenanotube 30 a are formed. Metal lines, such as line 33 in FIG. 6, canthen be connected to the metal covers to provide macroscopic electricalconnection to the nanotube 30 a.

[0046]FIGS. 8A-8C show metal covers, such as those shown in FIG. 7,being made using lithographical patterning, according to another exampleembodiment of the present invention. Referring to FIG. 8A, a layer ofspin-on resist 60 is deposited on top of catalyst islands 29 andnanotube 30 a. In FIG. 8B, the resist 60 is etched in regions 61 wherethe metal covers 34 are to be located. A layer of metal is thendeposited over the resist 60 and catalyst 29 (e.g., by physical vapordeposition or CVD). The resist 60 is removed in a lift-off process inFIG. 8C, leaving the metal covers 34.

[0047] In another example embodiment of the present invention, FIG. 9shows a side view of a device including a freestanding nanotube 30 bcapable of acting as a high-Q resonator. The nanotube 30 b is disposedabove a surface 36 of an etched trench region 35 in the substrate 22between catalyst islands 29 and is supported at ends 39 of the nanotube.In one implementation, the trench 35 and metal covers 34 are combined inthe same apparatus.

[0048] The structure in FIG. 9 is useful in a variety of applications.In one example embodiment, the nanotube 30 b is resonated by applying amagnetic field thereto (e.g., perpendicular to the length of thenanotube 30 b) and passing an oscillating current through the nanotube.A conductive film 37 is capacitively coupled with the nanotube 30 b andextracts a resonant signal from the nanotube. In another implementation,the conductive film 37 is used to electrostatically excite mechanicalvibrations in the nanotube 30 b.

[0049]FIG. 10 shows a top view of a substrate 22 and islands 29, whichcan be used to make a nanotube structure as shown, for example, in FIG.9. First, a nanotube 30 b that connects catalyst islands 29 is grown.Other nanotubes may also be grown from both islands, but are not shownfor clarity. Then, the substrate is masked with a resist, such as aspin-on resist, leaving an unmasked region defined by a box 38. Next,the region inside the box 38 is exposed to an etchant that removessubstrate material without necessarily affecting the nanotube 30 b. Theetchant includes one or more of a variety of etchants, depending uponthe composition of the substrate. For example, hydrofluoric acid can beused to etch SiO₂ or silicon substrates. Substrate below the nanotube 30b is etched, resulting in the nanotube being supported only at its ends39 as shown in FIG. 9. Metal lines 33 are used to provide macroscopicelectrical connections to the nanotube 30 b via the catalyst islands 29.Metal covers, such as covers 34 in FIG. 8C, can be deposited before orafter etching the trench 35 to provide Ohmic electrical connections tothe nanotube and improved mechanical stability for the nanotube ends 39.

[0050]FIGS. 11A and 11B show a suspended carbon nanotube beingmanufactured, such as the nanotube shown in FIG. 9, according to anotherexample embodiment of the present invention. In FIG. 11A, a substrate 22is etched to form the trench 35 where a nanotube is to be suspended. InFIG. 11B, islands 29 are disposed on opposite sides of the trench 35 anda nanotube 30 b is grown from the islands 29 and electrically connectsthe islands. The distance across the etched substrate, and thus betweenthe islands 20, is selected for the characteristics of a particularapplication, including manufacturing conditions and materials used. Inconnection with an example embodiment of the present invention, it hasbeen discovered that using catalyst islands having a width of at least 1micron and spacing the islands at a distance that is less than about 10microns apart is particularly useful in forming carbon nanotubesextending between the two catalyst islands. In addition, if a number ofcatalyst islands are spaced at varied distances in an array, thelikelihood of growing a carbon nanotube between islands is improved. Asin the example embodiments above, one of the islands can be replacedwith a metal pad, wherein the nanotube grows from the island 29 to thepad. In addition, metal covers, such as covers 34 in FIG. 8C, can bedeposited on top of the nanotube 30 b and catalyst islands 29.

[0051] In another example embodiment of the present invention (notshown), the nanotube 30 b is freestanding, such that the nanotube issupported on only one end by a catalyst island 29 (e.g., thefreestanding nanotube does not extend all the way across the trench 35).In this implementation, the nanotube is a cantilever and is adapted tobe used as a resonator.

[0052]FIG. 12 shows a catalyst particle 45 located on a tip 47 of anatomic force microscope (AFM) cantilever 42, according to anotherexample embodiment of the present invention. The cantilever 42 issupported by a base 49 and has a free end 48 opposite the base 49. Theparticle 45 may be made of one or more of a variety of catalystmaterials, such as Fe₂O₃ (decomposed from Fe(NO₃)₃) and others, asdiscussed above. The catalyst particle 45 may or may not have supportingnanoparticles (e.g., silica or alumina particles), and is firmlyattached to the tip 47. Atomically sharp nanotubes 30 are grown from theparticle 45, are firmly attached to the cantilever and are useful asprobe tips for AFM. In one implementation (not shown), the cantileverdoes not have a tip 47 and the particle is disposed directly on thecantilever 42.

[0053]FIGS. 13A-13D show a carbon nanotube on a tip being manufactured,according to another example embodiment of the present invention. InFIG. 13A, a substrate 50 is coated with a gold film 52, and droplets ofFe(NO₃)₃ dissolved in methanol are deposited on the gold surface. Themethanol is then evaporated, leaving only small particles 54 of Fe(NO₃)₃on the gold film 52. Next, an AFM tip 47 is brought into contact with aparticle 54 of Fe(NO₃)₃ in FIG. 13B. An electric field is then appliedbetween the tip 47 and the gold film 52. The electric field adheres theFe(NO₃)₃ particle to the tip 47. In one implementation, the electricfield also causes the Fe(NO₃)₃ to decompose into Fe₂O₃. In FIG. 13C, thecantilever 42 and tip 47 with the adhered Fe(NO₃)₃ particle 54 isremoved from the gold film 52. The cantilever 42 and tip 47 are heatedto fully decompose the Fe(NO₃)₃ particle 54 into an Fe₂O₃ particle 54 inFIG. 13D (e.g., as shown in FIG. 12). Nanotubes 30 are then grown fromthe catalyst particle 45.

[0054] While the present invention has been described with reference toseveral particular example embodiments, those skilled in the art willrecognize that many changes may be made thereto without departing fromthe spirit and scope of the present invention.

What is claimed is:
 1. A system for manufacturing a carbon nanotubedevice, comprising: first chamber means for forming at least one islandof catalyst material; and second chamber means for contacting thecatalyst island with a carbon-containing gas and forming a carbonnanotube extending from the catalyst island.
 2. The system of claim 1,wherein the second chamber means is adapted to create conditionssuitable for reacting the carbon-containing gas with the catalyst islandfor growing the carbon nanotube.
 3. The system of claim 1, wherein thesecond chamber means comprises: a chemical vapor deposition (CVD)apparatus configured and arranged for growing single wall carbonnanotubes.
 4. The system of claim 3, wherein the CVD apparatus isconfigured and arranged to introduce carbon feedstock gas for growingcarbon nanotubes in the second chamber means.
 5. The system of claim 3,wherein the CVD apparatus is configured and arranged to introduce thecarbon feedstock gas to a catalyst for growing carbon nanotubes in thesecond chamber means.
 6. The system of claim 1, wherein the secondchamber means is configured and arranged to grow carbon nanotubes from acatalyst island on a substrate in the chamber.
 7. The system of claim 1,wherein the second chamber means is further configured and arranged togrow a carbon nanotube extending between the catalyst island and acircuit node.
 8. The system of claim 1, wherein the second chamber meansis further configured and arranged to grow a circuit including a carbonnanotube extending between two circuit nodes and adapted for conductingelectricity between the two circuit nodes.
 9. The system of claim 1,wherein the second chamber means is further configured and arranged togrow a carbon nanotube extending from a cantilever tip.
 10. The systemof claim 9, wherein the second chamber means is further configured andarranged for holding a wafer including a multitude of cantilever tipsand to grow carbon nanotubes extending from a plurality of the multitudeof cantilever tips.
 11. The system of claim 1, wherein the secondchamber means is further configured and arranged to grow a carbonnanotube extending between two catalyst islands.
 12. The system of claim1, wherein the second chamber means is further configured and arrangedto grow a carbon nanotube from a catalyst island including analumina-supported iron catalyst.
 13. The system of claim 1, wherein thesecond chamber means is further configured and arranged to grow aplurality of carbon nanotubes extending from catalyst islands patternedon a substrate.
 14. The system of claim 1, wherein a gas supply isconfigured and arranged for introducing the carbon feedstock gas to thesecond chamber means.
 15. The system of claim 14, wherein the gas supplyis configured and arranged for introducing a carbon feedstock gasincluding Methane to the second chamber means to grow the carbonnanotube.
 16. The system of claim 1, wherein the second chamber means isconfigured and arranged to grow the carbon nanotube from catalystparticles lithographically patterned on a substrate.
 17. The system ofclaim 1, wherein the carbon nanotube is grown at a temperature of lessthan about 1000 degrees Celsius.
 18. The system of claim 17, wherein thecarbon nanotube is grown at a temperature of between about 850 and 100degrees Celsius.
 19. A system for manufacturing a carbon nanotubedevice, the system comprising: a chamber apparatus adapted to provideinternal heat at at least one controlled level; and a gas supplyconfigured and arranged with the chamber apparatus for contacting acatalyst island in the chamber with a carbon-containing gas and forming,under said at least one controlled level of heat, a carbon nanotubeextending from the catalyst island.
 20. The system of claim 19, whereinthe gas supply and the chamber apparatus are adapted to contact thecarbon-containing gas to the catalyst island for a period of timesufficient to form carbon nanotubes.
 21. The system of claim 19, whereinthe chamber apparatus is further adapted for heating the catalystisland.
 22. The system of claim 19, wherein the gas supply is configuredand arranged for contacting the catalyst island with a carbon containinggas that has been reacted using a catalyst.
 23. The system of claim 19,wherein the chamber apparatus is configured and arranged to heat asubstrate to decompose a catalyst material to form the catalyst island.24. The system of claim 19, wherein the chamber apparatus is configuredand arranged to heat the substrate while introducing a carbon feedstockgas to the catalyst material and growing an aligned carbon nanotubeextending from the catalyst material and across the trench.